gbpc12, gbpc15, gbpc25 & gbpc35 vishay general semiconductor document number: 88612 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 glass passivated single-phase bridge rectifier features ? ul recognition file number e54214 ? universal 3-way terminals: snap-on, wire wrap-around, or p.c.b. mounting ? typical i r less than 0.3 a ? high surge current capability ? low thermal resistance ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications general purpose use in ac-to-dc bridge full wave rectification for power supp ly, home appliances, office equipment, industrial automation applications. mechanical data case: gbpc, gbpc-w epoxy meets ul 94v-0 flammability rating terminals: nickel plated on faston lugs or silver plated on wire leads, solderable per j-std-002 and jesd22-b102. e4 suffix for consumer grade. suffix letter ?w? added to indicate wire leads (e.g. gbpc12005w). polarity: as marked, positive lead by belevled corner mounting torque: 20 inches-lbs. max. e4 primary characteristics i f(av) 12 a, 15 a, 25 a, 35 a v rrm 50 v to 1000 v i fsm 200 a, 300 a, 300 a, 400 a i r 5 a v f 1.1 v t j max. 150 c ~ ~ ~ ~ ~ ~ gbpc gbpc-w maximum ratings (t a = 25 c unless otherwise noted) parameter symbol gbpc12, 15, 25, 35 unit 005 01 02 04 06 08 10 maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified output current (fig. 1) gbpc12 gbpc15 gbpc25 gbpc35 i f(av) 12 15 25 35 a peak forward surge current single sine-wave superimposed on rated load gbpc12 gbpc15 gbpc25 gbpc35 i fsm 200 300 300 400 a rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms) for fusing gbpc12 gbpc15 gbpc25 gbpc35 i 2 t 160 375 375 660 a 2 s rms isolation voltage from case to leads v iso 2500 v operating junction storage temperature range t j , t stg - 55 to + 150 c
gbpc12, gbpc15, gbpc25 & gbpc35 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88612 revision: 15-apr-08 2 notes: (1) with heatsink (2) bolt down on heatsink with silicone thermal compound between bridge and mounting surface for maximum heat transfer with #10 screw electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol gbpc12, 15, 25, 35 unit 005 01 02 04 06 08 10 maximum instantaneous forward drop per diode gbpc12 gbpc15 gbpc25 gbpc35 i f = 6.0 a i f = 7.5 a i f = 12.5 a i f = 17.5 a v f 1.1 v maximum reverse dc current at rated dc blocking voltage per diode t a = 25 c t a = 125 c i r 5.0 500 a typical junction capacitance per diode 4 v, 1 mhz c j 300 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol gbpc12, 15, 25, 35 unit 005 01 02 04 06 08 10 typical thermal resistance (1) gbpc12-25 gbpc35 r jc 1.9 1.4 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode gbpc1206-e4/51 15.79 51 100 paper box gbpc1506-e4/51 15.79 51 100 paper box gbpc2506-e4/51 15.79 51 100 paper box gbpc3506-e4/51 15.79 51 100 paper box gbpc1206w-e4/51 13.8 51 100 paper box gbpc1506w-e4/51 13.8 51 100 paper box gbpc2506w-e4/51 13.8 51 100 paper box gbpc3506w-e4/51 13.8 51 100 paper box
gbpc12, gbpc15, gbpc25 & gbpc35 vishay general semiconductor document number: 88612 revision: 15-apr-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. maximum output rectified current figure 2. maximum output rectified current figure 3. maximum power dissipation 0 25 50 75 100 125 150 175 200 0 5 20 15 25 10 30 35 40 bridges mo u nte d on 9.5 x 3.5 x 4.6" (22.9 x 8 .9 x 11.7 cm) al, finned plate 5 x 6 x 4.9" al, finned plate 5 x 4 x 3" al, finned plate 6 x 2.2 x 2.2" al, finned plate 60 hz resisti v e or ind u cti v e load case temperat u re (c) a v erage for w ard c u rrent (a) 0 10 20 30 40 50 60 70 8 0 90 100 0 5 10 15 20 25 30 35 40 60 hz resisti v e or ind u cti v e load gbpc35 r thsa = 0.5 c/ w gbpc15 r thsa = 1.0 c/ w gbpc12 r thsa = 1.0 c/ w gbpc25 r thsa = 0.5 c/ w am b ient temperat u re (c) a v erage for w ard c u rrent (a) a v erage o u tp u t c u rrent (a) a v erage po w er dissipation of bridge ( w ) 0 10 20 30 40 0 10 20 30 40 50 60 70 8 0 capaciti v e load t j = t j max. resisti v e or ind u cti v e load figure 4. maximum non-repetit ive peak forward surge current per diode figure 5. typical instantaneous forw ard characteristics per diode figure 6. typical reverse leak age characteristics per diode nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) 1 10 10 1000 gbpc35 gbpc15 gbpc25 gbpc12 t j = t j max. 0.5 ms single sine- w a v e 100 100 1.0 cycle instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 0.4 0.5 0.6 0.7 0.9 1.0 1.1 0.1 1 10 100 0. 8 t a = 100 c t a = 150 c t a = 125 c t a = 25 c 0 20 40 60 8 0 100 0.1 1 10 100 percent of rated peak re v erse v oltage (%) instantaneo u s re v erse leakage c u rrent ( a) 30 50 70 90 1000 t a = 100 c t a = 150 c t a = 125 c t a = 25 c 10
gbpc12, gbpc15, gbpc25 & gbpc35 vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88612 revision: 15-apr-08 4 package outline dimensions in inches (millimeters) figure 7. typical junction capacitance per diode 1 10 100 10 100 1000 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p re v erse v oltage ( v ) j u nction capaci tance (pf) figure 8. typical transient thermal impedance per diode 0.01 0.1 1 10 100 1 10 100 1000 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p t - heating time (s) transient thermal impedance (c/ w ) 1.135 (2 8 . 8 ) 1.115 (2 8 .3) 0.732 (1 8 .6) 0.692 (17.6) 0.470 (11.9) 0.430 (10.9) 0.042 (1.07) 0.03 8 (0.97) dia. 0.310 (7.62) 0.290 (7.36) 1.25 (31. 8 ) mi n . 1.135 (2 8 . 8 ) 1.115 (2 8 .3) 0.732 (1 8 .6) 0.692 (17.6) hole for #10 scre w 0.220 (5.59) 0.200 (5.0 8 ) dia. 0.24 (6.0) 0.1 8 (4.6) 0.50 (12.7) 0.44 (11.7) 0.24 (6.0) 0.1 8 (4.6) gbpc-w gbpc 1.135 (2 8 . 8 ) 1.115 (2 8 .3) 0.672 (17.1) 0.632 (16.1) 0.732 (1 8 .6) 0.692 (17.6) 0.094 (2.4) dia. 0.034 (0. 8 6) 0.030 (0.76) 0.25 (6.35) ac 0. 8 40 (21.3) 0.740 (1 8 . 8 ) 0.5 8 2 (14. 8 ) 0.542 (13. 8 ) 0.672 (17.1) 0.632 (16.1) 1.135 (2 8 . 8 ) 1.115 (2 8 .3) 0.310 (7.62) 0.290 (7.36) 0.034 (0. 8 6) 0.030 (0.76) hole for #10 scre w 0.220 (5.59) 0.200 (5.0 8 ) dia.
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